? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c14a i dm t c = 25 c, pulse width limited by t jm 42 a i a t c = 25 c 14 a e as t c = 25 c 900 mj p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220)(to-3p) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g ds99329f(12/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 100 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 450 550 m polarhv tm power mosfet p-channel enhancement mode avalanche rated ixta14n60p IXTP14N60P ixtq14n60p v dss = 600v i d25 = 14a r ds(on) 550m features z international standard packages z avalanche rated advantages z easy to mount z space savings z high power density applications z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g = gate d = drain s = source tab = drain (tab) to-220 d g s (tab) to-263 g s to-3p g d s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta14n60p IXTP14N60P ixtq14n60p ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 7 13 s c iss 2500 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 215 pf c rss 13 pf t d(on) 23 ns t r 27 ns t d(off) 70 ns t f 26 ns q g(on) 36 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 16 nc q gd 12 nc r thjc 0.42 c/w r thcs (to-220) 0.50 c/w (to-3p 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 14 a i sm repetitive, pulse width limited by t jm 42 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 500 ns resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 14a, -di/dt = 100a/ s v r = 100v, v gs = 0v to-263 (ixta) outline to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline
? 2008 ixys corporation, all rights reserved ixta14n60p IXTP14N60P ixtq14n60p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 012345678 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 024681012141618 v ds - volts i d - amperes v gs = 10v 8v 6v 7v fig. 4. r ds(on) normalized to i d = 7a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 14a i d = 7a fig. 5. r ds(on) normalized to i d = 7a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 036912151821242730 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixys ref: f_14n60p(5j)12-22-08-g
ixys reserves the right to change limits, test conditions, and dimensions. ixta14n60p IXTP14N60P ixtq14n60p fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12162024283236 q g - nanocoulombs v gs - volts v ds = 300v i d = 7a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes 25s 100s 1ms 10ms dc r ds(on) limit t j = 150oc t c = 25oc single pulse
? 2008 ixys corporation, all rights reserved ixta14n60p IXTP14N60P ixtq14n60p fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_14n60p(5j)12-22-08-g
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